DANGLING BOND SURFACE-STATE OF SI(111) - NEW RESULTS

被引:6
作者
GUICHAR, GM [1 ]
HOUZAY, F [1 ]
PINCHAUX, R [1 ]
PETROFF, Y [1 ]
机构
[1] UNIV PARIS 06, PHYS SOLIDES LAB, F-75230 PARIS 05, FRANCE
关键词
D O I
10.1016/0038-1098(81)90301-X
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:809 / 813
页数:5
相关论文
共 24 条
  • [1] SURFACE STATES AND SURFACE BONDS OF SI(111)
    APPELBAUM, JA
    HAMANN, DR
    [J]. PHYSICAL REVIEW LETTERS, 1973, 31 (02) : 106 - 109
  • [2] ATOMIC AND ELECTRONIC-STRUCTURE OF THE 7X7 RECONSTRUCTED SI(111) SURFACE
    CHADI, DJ
    BAUER, RS
    WILLIAMS, RH
    HANSSON, GV
    BACHRACH, RZ
    MIKKELSEN, JC
    HOUZAY, F
    GUICHAR, GM
    PINCHAUX, R
    PETROFF, Y
    [J]. PHYSICAL REVIEW LETTERS, 1980, 44 (12) : 799 - 802
  • [3] ENERGY-MINIMIZATION APPROACH TO ATOMIC GEOMETRY OF SEMICONDUCTOR SURFACES
    CHADI, DJ
    [J]. PHYSICAL REVIEW LETTERS, 1978, 41 (15) : 1062 - 1065
  • [4] CHADI DJ, 1979, PHYSICS SEMICONDUCTO
  • [5] NEW INTERPRETATION OF ANGULAR-RESOLVED PHOTOEMISSION MEASUREMENTS FROM CLEAVED SILICON
    CIRACI, S
    BATRA, IP
    [J]. SOLID STATE COMMUNICATIONS, 1976, 18 (08) : 1149 - 1152
  • [6] PHOTOEMISSION DENSITIES OF INTRINSIC SURFACE STATES FOR SI, GE, AND GAAS
    EASTMAN, DE
    GROBMAN, WD
    [J]. PHYSICAL REVIEW LETTERS, 1972, 28 (21) : 1378 - &
  • [7] PHOTOEMISSION STUDIES OF 2P CORE LEVELS OF PURE AND HEAVILY DOPED SILICON
    EBERHARDT, W
    KALKOFFEN, G
    KUNZ, C
    ASPNES, D
    CARDONA, M
    [J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1978, 88 (01): : 135 - 143
  • [8] LOW-ENERGY ELECTRON-DIFFRACTION FROM SI(111)-2 X 1 - THEORY AND EXPERIMENT
    FEDER, R
    MONCH, W
    AUER, PP
    [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1979, 12 (05): : L179 - L184
  • [9] SURFACE MOLECULES AND CHEMISORPTION .2. PHOTOEMISSION ANGULAR-DISTRIBUTIONS
    GADZUK, JW
    [J]. PHYSICAL REVIEW B, 1974, 10 (12): : 5030 - 5044
  • [10] GUICHAR GM, 1978, THESIS U P M CURIE P