RELATIONSHIP BETWEEN GAS-FLOWS AND FILM COMPOSITION IN ORGANOMETALLIC VAPOR-PHASE EPITAXY OF IN1-XGAXAS

被引：3

作者：

DOSLUOGLU, T

SUDARSAN, U

SOLANKI, R

机构：

[1] Department of Applied Physics and Electrical Engineering, Oregon Graduate Institute, Beaverton, OR 97006

来源：

JOURNAL OF CRYSTAL GROWTH | 1990年 / 106卷 / 04期

关键词：

D O I：

10.1016/0022-0248(90)90038-M

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Relationship between the flow rates of the precursor gases and the composition of In1-xGa(x)As epilayers on InP has been examined. Based on experimental data a linear model has been developed to predict this relationship. This model has been used to obtain lattice matching to better than 1.2 x 10(-4).

引用

页码：643 / 650

页数：8

共 18 条

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