ENHANCED DIFFUSION OF DOPANTS AT CONCENTRATIONS NEAR THE SOLUBILITY LIMIT

被引:21
作者
ANTONCIK, E
机构
[1] University of Aarhus, Aarhus
关键词
D O I
10.1149/1.2059376
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
When discussing diffusion processes of dopants at very high concentrations, i.e., close to their solubility limit, it is absolutely necessary to take into account the fact that the number of substitutional sites accessible to additional donors/acceptors is decreasing or equal to zero when their concentration approaches/exceeds the solubility limit. It turns out that this results in a largely enhanced diffusion at dopant concentrations comparable with their solubility limit. Furthermore, for simple diffusion mechanisms it is possible to derive an analytical expression for the effective diffusion coefficient, depending on the dopant concentration, which can be used in process modeling.
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页码:3593 / 3595
页数:3
相关论文
共 17 条
[11]   THEORY OF ANOMALOUS DIFFUSION IN SOLIDS NEAR DIFFUSANT SATURATION CONCENTRATIONS - EXAMPLE-PHOSPHORUS IN SILICON [J].
BAKEMAN, PE ;
BORREGO, JM .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (05) :688-&
[12]   PRECIPITATION AS THE PHENOMENON RESPONSIBLE FOR THE ELECTRICALLY INACTIVE ARSENIC IN SILICON [J].
NOBILI, D ;
CARABELAS, A ;
CELOTTI, G ;
SOLMI, S .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (04) :922-928
[13]  
Philibert J., 1991, ATOM MOVEMENTS DIFFU
[14]  
PHILIBERT J, 1991, ATOM MOVEMENTS DIFFU, P11
[16]   STATISTICS OF THE CHARGE DISTRIBUTION FOR A LOCALIZED FLAW IN A SEMICONDUCTOR [J].
SHOCKLEY, W ;
LAST, JT .
PHYSICAL REVIEW, 1957, 107 (02) :392-396
[17]   DETAILED ANALYSIS OF THIN PHOSPHORUS-DIFFUSED LAYERS IN PARA-TYPE SILICON [J].
TANNENBAUM, E .
SOLID-STATE ELECTRONICS, 1961, 2 (2-3) :123-132