NONCONTACT ELECTRICAL CHARACTERIZATION OF LOW-RESISTIVITY P-TYPE ZNSE-N GROWN BY MOLECULAR-BEAM EPITAXY

被引：16

作者：

PARK, RM ^{[1
]}

TROFFER, MB ^{[1
]}

YABLONOVITCH, E ^{[1
]}

GMITTER, TJ ^{[1
]}

机构：

[1] BELLCORE,NAVESINK RES CTR,RED BANK,NJ 07701

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 15期

关键词：

D O I：

10.1063/1.106181

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The resistivity of p-type ZnSe:N/GaAs heteroepitaxial layers grown by molecular beam epitaxy using a nitrogen free-radical source has been determined as a function of both substrate temperature and the Zn-to-Se beam equivalent pressure (BEP) ratio employed during growth. Layer resistivities were determined using a noncontact inductive-coupling radio-frequency measurement technique that provided sheet conductivity data from which layer resistivities were calculated. A minimum resistivity of 0.75 OMEGA-cm has been measured to date for p-type ZnSe:N material grown at 235-degrees-C with a BEP ratio of 1:2. Such a resistivity would imply a free-hole density in the range 4 x 10(17)-8 x 10(17) cm-3 assuming the hole mobility to be in the range 20-10 cm2 V-1 s-1, respectively.

引用

页码：1896 / 1898

页数：3

共 9 条

[1] THE ROLE OF IMPURITIES IN REFINED ZNSE AND OTHER II-VI-SEMICONDUCTORS [J].