MICROWAVE MEASUREMENT OF VELOCITY-FIELD CHARACTERISTIC OF GAAS

[1] MEASUREMENTS OF CURRENT-FIELD STRENGTH CHARACTERISTIC OF N-TYPE GALLIUM ARSENIDE USING VARIOUS HIGH-POWER MICROWAVE TECHNIQUES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (09) : 505 - +

[2] DETERMINATION OF NEGATIVE DIFFERENTIAL MOBILITY OF N-TYPE GALLIUM ARSENIDE USING 8MM-MICROWAVES [J]. PHYSICS LETTERS A, 1967, A 24 (04) : 200 - &

[3] SEMICONDUCTOR ROD IN WAVEGUIDE - FIELD DISTRIBUTION FOR POSITIVE AND NEGATIVE CONDUCTIVITY [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1968, MT16 (03) : 194 - &

[4] ARIZUMI T, 1966, J I ELECT COMMUN ENG, V49, P10

[5] BLAKESLEE AE, ECOM01550F US ARM EL

[6] MONTE CARLO CALCULATION OF VELOCITY-FIELD RELATIONSHIP FOR GALLIUM ARSENIDE [J]. SOLID STATE COMMUNICATIONS, 1968, 6 (05) : 305 - &

[7] VELOCITY-FIELD CHARACTERISTIC OF GALLIUM ARSENIDE FROM MEASUREMENT OF CONDUCTIVITY IN A MICROWAVE FIELD [J]. PHYSICS LETTERS A, 1967, A 24 (10) : 531 - &

[8] INTERVALLEY TRANSFER MECHANISM OF NEGATIVE RESISTIVITY IN BULK SEMICONDUCTORS [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1965, 86 (554P): : 1205 - &

[9] CALCULATION OF VELOCITY-FIELD CHARACTERISTIC FOR GALLIUM ARSENIDE [J]. PHYSICS LETTERS, 1966, 21 (05): : 489 - &

[10] COMMENT ON MICROWAVE MEASUREMENT OF CONDUCTIVITY + DIELECTRIC CONSTANT OF SEMICONDUCTORS [J]. PROCEEDINGS OF THE IEEE, 1964, 52 (09) : 1061 - &

[1] MEASUREMENTS OF CURRENT-FIELD STRENGTH CHARACTERISTIC OF N-TYPE GALLIUM ARSENIDE USING VARIOUS HIGH-POWER MICROWAVE TECHNIQUES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (09) : 505 - +

[2] DETERMINATION OF NEGATIVE DIFFERENTIAL MOBILITY OF N-TYPE GALLIUM ARSENIDE USING 8MM-MICROWAVES [J]. PHYSICS LETTERS A, 1967, A 24 (04) : 200 - &

[3] SEMICONDUCTOR ROD IN WAVEGUIDE - FIELD DISTRIBUTION FOR POSITIVE AND NEGATIVE CONDUCTIVITY [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1968, MT16 (03) : 194 - &

[4] ARIZUMI T, 1966, J I ELECT COMMUN ENG, V49, P10

[5] BLAKESLEE AE, ECOM01550F US ARM EL

[6] MONTE CARLO CALCULATION OF VELOCITY-FIELD RELATIONSHIP FOR GALLIUM ARSENIDE [J]. SOLID STATE COMMUNICATIONS, 1968, 6 (05) : 305 - &

[7] VELOCITY-FIELD CHARACTERISTIC OF GALLIUM ARSENIDE FROM MEASUREMENT OF CONDUCTIVITY IN A MICROWAVE FIELD [J]. PHYSICS LETTERS A, 1967, A 24 (10) : 531 - &

[8] INTERVALLEY TRANSFER MECHANISM OF NEGATIVE RESISTIVITY IN BULK SEMICONDUCTORS [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1965, 86 (554P): : 1205 - &

[9] CALCULATION OF VELOCITY-FIELD CHARACTERISTIC FOR GALLIUM ARSENIDE [J]. PHYSICS LETTERS, 1966, 21 (05): : 489 - &

[10] COMMENT ON MICROWAVE MEASUREMENT OF CONDUCTIVITY + DIELECTRIC CONSTANT OF SEMICONDUCTORS [J]. PROCEEDINGS OF THE IEEE, 1964, 52 (09) : 1061 - &