MICROWAVE MEASUREMENT OF VELOCITY-FIELD CHARACTERISTIC OF GAAS

[11] DIRECT OBSERVATION OF DRIFT VELOCITY AS A FUNCTION OF ELECTRIC FIELD IN GALLIUM ARSENIDE [J]. APPLIED PHYSICS LETTERS, 1966, 9 (08) : 283 - +

[12] A MICROWAVE EVALUATION OF VELOCITY-FIELD CHARACTERISTIC IN DIFFERENT REGIONS OF INDIVIDUAL EPITAXIAL GALLIUM - ARSENIDE LAYERS [J]. PROCEEDINGS OF THE IEEE, 1969, 57 (07) : 1299 - +

[13] HIGH-FIELD TRANSPORT IN N-TYPE GAAS [J]. PHYSICAL REVIEW, 1968, 166 (03): : 797 - +

[14] FAWCETT W, TO BE BPULISHED

[15] MEASUREMENT OF NEGATIVE DIFFERENTIAL MOBILITY OF ELECTRONS IN GAAS [J]. PHYSICS LETTERS, 1966, 22 (04): : 369 - +

[16] GUNN JB, 1967, REPT PROG PHYS, V30, P97

[17] HAMAGUCHI G, 1967, PHYS LETTERS A, V24, P500

[18] DISPLACED MAXWELLIAN CALCULATION OF TRANSPORT IN N-TYPE GAAS [J]. PHYSICAL REVIEW, 1969, 178 (03): : 1319 - +

[19] KALASHNIKOV SG, 1967, SOV PHYS SEMICOND, V1, P1206

[20] TIME RESPONSE OF HIGH-FIELD ELECTRON DISTRIBUTION FUNCTION IN GAAS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1969, 13 (05) : 537 - &

[11] DIRECT OBSERVATION OF DRIFT VELOCITY AS A FUNCTION OF ELECTRIC FIELD IN GALLIUM ARSENIDE [J]. APPLIED PHYSICS LETTERS, 1966, 9 (08) : 283 - +

[12] A MICROWAVE EVALUATION OF VELOCITY-FIELD CHARACTERISTIC IN DIFFERENT REGIONS OF INDIVIDUAL EPITAXIAL GALLIUM - ARSENIDE LAYERS [J]. PROCEEDINGS OF THE IEEE, 1969, 57 (07) : 1299 - +

[13] HIGH-FIELD TRANSPORT IN N-TYPE GAAS [J]. PHYSICAL REVIEW, 1968, 166 (03): : 797 - +

[14] FAWCETT W, TO BE BPULISHED

[15] MEASUREMENT OF NEGATIVE DIFFERENTIAL MOBILITY OF ELECTRONS IN GAAS [J]. PHYSICS LETTERS, 1966, 22 (04): : 369 - +

[16] GUNN JB, 1967, REPT PROG PHYS, V30, P97

[17] HAMAGUCHI G, 1967, PHYS LETTERS A, V24, P500

[18] DISPLACED MAXWELLIAN CALCULATION OF TRANSPORT IN N-TYPE GAAS [J]. PHYSICAL REVIEW, 1969, 178 (03): : 1319 - +

[19] KALASHNIKOV SG, 1967, SOV PHYS SEMICOND, V1, P1206

[20] TIME RESPONSE OF HIGH-FIELD ELECTRON DISTRIBUTION FUNCTION IN GAAS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1969, 13 (05) : 537 - &