LASER ABLATION DEPOSITION OF TIN FILMS

被引：38

作者：

KOOLS, JCS ^{[1
]}

NILLESEN, CJCM ^{[1
]}

BRONGERSMA, SH ^{[1
]}

VANDERIET, E ^{[1
]}

DIELEMAN, J ^{[1
]}

机构：

[1] EINDHOVEN UNIV TECHNOL,5600 MB EINDHOVEN,NETHERLANDS

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1992年 / 10卷 / 04期

关键词：

D O I：

10.1116/1.577751

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Excimer laser ablation of TiN ceramic in vacuum and of Ti metal in N2 gas environment is used to deposit thin TiN films on Si substrates. The dependence of thin film properties (stoichiometry, morphology, and crystallinity) on process parameters such as substrate temperature, background pressure, target quality, applied voltages, and laser fluence is investigated. It is shown that it is virtually impossible to grow stoichiometric TiN films by ablation of Ti in a N2 background atmosphere at a substrate temperature of 300 K. At a substrate temperature of 300-degrees-C and a background pressure below 1 X 10(-8)mbar, it is possible to grow polycrystalline TiN films with good stoichiometry from a TiN ceramic target. Comparison with other physical and chemical thin film deposition techniques shows that films of equivalent quality can be grown at a considerably lower substrate temperature (150 -250-degrees-C lower) by this technique, a feature that opens-interesting technological perspectives.

引用

页码：1809 / 1814

页数：6

共 15 条

[1] LASER DEPOSITION OF EPITAXIAL TITANIUM NITRIDE FILMS ON (100) MGO [J].