DIFFUSION IN SILICON .1. EFFECT OF DISLOCATION MOTION ON DIFFUSION COEFFICIENTS OF BORON AND PHOSPHORUS IN SILICON

被引：27

作者：

PARKER, TJ

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1967年 / 38卷 / 09期

关键词：

D O I：

10.1063/1.1710152

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：3471 / &

相关论文

共 21 条

[1] ON STRAIN-ENHANCED DIFFUSION IN METALS .1. DEFECT MODELS [J].

BALLUFF, RW ;

RUOFF, AL .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (06) :1634-&

[2] X-RAY MEASUREMENT OF ELASTIC STRAIN AND LATTICE CONSTANT OF DIFFUSED SILICON [J].

COHEN, BG .

SOLID-STATE ELECTRONICS, 1967, 10 (01) :33-&

[3] CONDITIONS FOR GENERATION OF SLIP BY DIFFUSION OF PHOSPHORUS INTO SILICON [J].

CZAJA, W .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (09) :3441-&

[4] GROWTH OF SILICON CRYSTALS FREE FROM DISLOCATIONS [J].

DASH, WC .

JOURNAL OF APPLIED PHYSICS, 1959, 30 (04) :459-474

[5] DIFFUSION-INDUCED DISLOCATION NETWORKS IN SI ( P + B DIFFUSION E/T ) [J].

JACCODINE, RJ .

APPLIED PHYSICS LETTERS, 1964, 4 (06) :114-&

[6] OBSERVATION OF DIFFUSION-INDUCED DISLOCATION LINES IN SILICON THROUGH OPTICAL MICROSCOPY [J].

JOSHI, ML ;

WILHELM, FJ .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (08) :2593-&

[7] COOPERATIVE DIFFUSION EFFECT [J].

LAWRENCE, JE .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (11) :4106-+

[8] THE DIFFUSION OF PHOSPHORUS IN SILICON [J].

MACKINTOSH, IM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (05) :392-401

[9] DIFFUSION OF BORON INTO SILICON [J].

MAEKAWA, S ;

OSHIDA, T .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1964, 19 (03) :253-&

[10] DIFFUSION OF PHOSPHORUS INTO SILICON [J].

MAEKAWA, S .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1962, 17 (10) :1592-&