PROPERTIES OF EPITAXIAL GALLIUM-ARSENIDE FROM TRIMETHYLGALLIUM AND ARSINE

被引：67

作者：

ITO, S ^{[1
]}

SHINOHARA, T ^{[1
]}

SEKI, Y ^{[1
]}

机构：

[1] NIPPON ELECT CO, CENT RES LABS, SHIMONUMABE, KAWASAKI, JAPAN

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1973年 / 120卷 / 10期

关键词：

D O I：

10.1149/1.2403273

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

This paper presents some electrical and optical properties of the epitaxial layers grown on GaAs substrates from trimethylgallium and arsine in connection with deposition conditions. Correlations between the carrier concentration and the intensity of the P//2 emission with left bracket As right bracket / left bracket Ga right bracket suggest that the main acceptor impurities in the epitaxial layer are amphoteric ones on As sites, such as carbon and silicon contained in the trimethylgallium source. Results of the mass-spectrographic analysis of the layers are consistent with the above suggestion.

引用

页码：1419 / 1423

页数：5

共 24 条

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