REACTIVE ION ETCHING OF ALINGAP AND GAAS IN SICL4/CH4/AR-BASED PLASMAS

被引：2

作者：

CHANG, CVJM

RIJPERS, JCN

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1994年 / 12卷 / 02期

关键词：

D O I：

10.1116/1.587034

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The reactive ion etching of AlInGaP and GaAs with a gas mixture of SiCl4, CH4, and Ar is examined. Process parameters such as gas flow composition and radio-frequency power input are varied. The CH4 flow variation in particular has a substantial effect on the morphology of AlInGaP, while generally the effects on GaAs are less dramatic. The etch rates of AlInGaP and GaAs show similar trends. A suitable etching process was found and applied to an AlInGaP/InGaP index-guided 675 nm laser structure.

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页码：536 / 539

页数：4

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