CROSS-SECTIONAL SCANNING-TUNNELING-MICROSCOPY STUDY OF GAAS/ALAS SHORT-PERIOD SUPERLATTICES - THE INFLUENCE OF GROWTH INTERRUPT ON THE INTERFACIAL STRUCTURE

被引：35

作者：

SMITH, AR

CHAO, KJ

SHIH, CK

SHIH, YC

STREETMAN, BG

机构：

[1] UNIV TEXAS,DEPT PHYS,AUSTIN,TX 78712

[2] UNIV TEXAS,DEPT ELECT & COMP ENGN,AUSTIN,TX 78712

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 04期

关键词：

D O I：

10.1063/1.114062

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report studies of GaAs/AlAs short period superlattices using cross-sectional scanning tunneling microscopy. In particular, we investigate the role of growth interrupt time on the resulting interfacial structure. Superlattices with repeated periods of four layers of GaAs and two layers of AlAs are resolved atom by atom. Superlattices grown using a 30 s growth interrupt time are observed while those grown with a 5 s growth interrupt time are not. We also discuss residual effects of the growth interrupt process on layers grown on top of the short-period superlattice. © 1995 American Institute of Physics.

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页码：478 / 480

页数：3

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