SCANNING-TUNNELING-MICROSCOPY OF INAS GA1-XINXSB SUPERLATTICES

被引:27
作者
LEW, AY
YU, ET
CHOW, DH
MILES, RH
机构
[1] UNIV CALIF SAN DIEGO,DEPT ELECT & COMP ENGN,LA JOLLA,CA 92093
[2] HUGHES RES LABS,MALIBU,CA 90265
关键词
D O I
10.1063/1.112673
中图分类号
O59 [应用物理学];
学科分类号
摘要
Cross-sectional scanning tunneling microscopy and spectroscopy have been used to characterize InAs/Ga1-xInxSb strained-layer superlattices grown by molecular-beam epitaxy. Monolayer roughness of the InAs/Ga1-xInxSb interfaces is visible in atomically resolved images of the epitaxial layers. An asymmetry in electronic structure between interfaces in which InAs has been grown on Ga1-xInSb and those in which Ga1-xInxSb has been grown on InAs has also been observed in these images. Current-voltage spectra obtained while tunneling into the epitaxial layers are found to be strongly influenced by extended superlattice electronic states.
引用
收藏
页码:201 / 203
页数:3
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