SCANNING-TUNNELING-MICROSCOPY OF INAS GA1-XINXSB SUPERLATTICES

被引：27

作者：

LEW, AY

YU, ET

CHOW, DH

MILES, RH

机构：

[1] UNIV CALIF SAN DIEGO,DEPT ELECT & COMP ENGN,LA JOLLA,CA 92093

[2] HUGHES RES LABS,MALIBU,CA 90265

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 02期

关键词：

D O I：

10.1063/1.112673

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Cross-sectional scanning tunneling microscopy and spectroscopy have been used to characterize InAs/Ga1-xInxSb strained-layer superlattices grown by molecular-beam epitaxy. Monolayer roughness of the InAs/Ga1-xInxSb interfaces is visible in atomically resolved images of the epitaxial layers. An asymmetry in electronic structure between interfaces in which InAs has been grown on Ga1-xInSb and those in which Ga1-xInxSb has been grown on InAs has also been observed in these images. Current-voltage spectra obtained while tunneling into the epitaxial layers are found to be strongly influenced by extended superlattice electronic states.

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页码：201 / 203

页数：3

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