TELLURIUM DOPING STUDY OF GASB GROWN BY MOLECULAR-BEAM EPITAXY USING SNTE

The application of SnTe as a tellurium source of donor impurities in the growth of n-type GaSb by molecular beam epitaxy (MBE) is investigated. We obtained Hall carrier concentrations ranging from 1.23 x 10(16) to 3.7 x 10(18) cm-3. At a growth temperature of 500-degrees-C, the estimated donor concentrations are proportional to the arrival rate of the molecular dopants up to 3 x 10(18) cm-3. Room-temperature Hall mobilities as high as 5114 cm2/V.s were measured for a GaSb layer with n(H) = 3.8 x 10(16) cm-3. These results, coupled with the insensitivity of the electron concentration to the Sb4/Ga flux ratio, at a growth temperature of 500-degrees-C, may lead to SnTe being one of the donor dopants of choice in the MBE growth of n-type GaSb.