CONTACT AND METALLIZATION PROBLEMS IN GAAS INTEGRATED-CIRCUITS

被引:31
作者
BRASLAU, N
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1986年 / 4卷 / 06期
关键词
D O I
10.1116/1.573633
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
引用
收藏
页码:3085 / 3090
页数:6
相关论文
共 35 条
[11]  
KANNAMORI M, 1985, IEEE GALLIUM ARSENID, P49
[12]  
Kato N., 1985, International Electron Devices Meeting. Technical Digest (Cat. No. 85CH2252-5), P90
[13]   LOW-RESISTANCE NONALLOYED OHMIC CONTACTS TO SI-DOPED MOLECULAR-BEAM EPITAXIAL GAAS [J].
KIRCHNER, PD ;
JACKSON, TN ;
PETTIT, GD ;
WOODALL, JM .
APPLIED PHYSICS LETTERS, 1985, 47 (01) :26-28
[14]   ELECTRON-MICROSCOPE STUDIES OF AN ALLOYED AU/NI-AU-GE OHMIC CONTACT TO GAAS [J].
KUAN, TS ;
BATSON, PE ;
JACKSON, TN ;
RUPPRECHT, H ;
WILKIE, EL .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (12) :6952-6957
[15]   EFFECT OF PHASE-SEPARATION ON THE ELECTRICAL-PROPERTIES OF THE INTERFACE BETWEEN NI-TA THIN-FILMS AND GAAS SUBSTRATE [J].
LAHAV, A ;
EIZENBERG, M .
APPLIED PHYSICS LETTERS, 1985, 46 (04) :430-432
[16]   PARASITIC SOURCE AND DRAIN RESISTANCE IN HIGH-ELECTRON-MOBILITY TRANSISTORS [J].
LEE, SJ ;
CROWELL, CR .
SOLID-STATE ELECTRONICS, 1985, 28 (07) :659-668
[17]   ELECTRONIC-STRUCTURE OF A METAL-SEMICONDUCTOR INTERFACE [J].
LOUIE, SG ;
COHEN, ML .
PHYSICAL REVIEW B, 1976, 13 (06) :2461-2469
[18]   MICROSTRUCTURE STUDIES OF AUNIGE OHMIC CONTACTS TO N-TYPE GAAS [J].
MURAKAMI, M ;
CHILDS, KD ;
BAKER, JM ;
CALLEGARI, A .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (04) :903-911
[19]  
MURAKAMI M, COMMUNICATION
[20]   ELECTRICAL STUDY OF SCHOTTKY BARRIERS ON ATOMICALLY CLEAN GAAS(110) SURFACES [J].
NEWMAN, N ;
VANSCHILFGAARDE, M ;
KENDELWICZ, T ;
WILLIAMS, MD ;
SPICER, WE .
PHYSICAL REVIEW B, 1986, 33 (02) :1146-1159