BORON PROFILE CHANGES DURING LOW-TEMPERATURE ANNEALING OF BF2+-IMPLANTED SILICON

被引：14

作者：

KIM, YD ^{[1
]}

MASSOUD, HZ ^{[1
]}

FAIR, RB ^{[1
]}

机构：

[1] MICROELECTR CTR N CAROLINA,RES TRIANGLE PK,NC 27709

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 22期

关键词：

D O I：

10.1063/1.100505

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2197 / 2199

页数：3

共 26 条

[1] TRANSIENT ENHANCED DIFFUSION OF DOPANTS IN SILICON INDUCED BY IMPLANTATION DAMAGE [J].

ANGELUCCI, R ;

NEGRINI, P ;

SOLMI, S .

APPLIED PHYSICS LETTERS, 1986, 49 (21) :1468-1470

[2]

CALDER ID, 1985, MATERIALS RES SOC S, V35, P353

[3]

CALDER ID, UNPUB

[4] RESIDUAL DEFECTS FOLLOWING RAPID THERMAL ANNEALING OF SHALLOW BORON AND BORON FLUORIDE IMPLANTS INTO PREAMORPHIZED SILICON [J].

CARTER, C ;

MASZARA, W ;

SADANA, DK ;

ROZGONYI, GA ;

LIU, J ;

WORTMAN, J .

APPLIED PHYSICS LETTERS, 1984, 44 (04) :459-461

[5] 1-2-KEV BORON IMPLANTS INTO SILICON [J].

DAVIES, DE .

IEEE ELECTRON DEVICE LETTERS, 1985, 6 (08) :397-399

[6] ANOMALOUS MIGRATION OF ION-IMPLANTED AL IN SI [J].

DIETRICH, HB ;

WEISENBERGER, WH ;

COMAS, J .

APPLIED PHYSICS LETTERS, 1976, 28 (04) :182-184

[7] THEORY AND DIRECT MEASUREMENT OF BORON SEGREGATION IN SIO2 DURING DRY, NEAR DRY, AND WET O2 OXIDATION [J].

FAIR, RB ;

TSAI, JCC .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (12) :2050-2058

[8]

FAIR RB, 1988, SPR M EL SOC PENN, V881, P303

[9] ENHANCED ELIMINATION OF IMPLANTATION DAMAGE UPON EXCEEDING THE SOLID SOLUBILITY [J].

JONES, KS ;

PRUSSIN, S ;

WEBER, ER .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (10) :4114-4117

[10] RAPID THERMAL ANNEALING CHARACTERISTICS OF AS+-IMPLANTED AND BF2+-IMPLANTED SI [J].

KWOR, R ;

KWONG, DL ;

YEO, YK .

APPLIED PHYSICS LETTERS, 1984, 45 (01) :77-79

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