SELECTIVE GROWTH OF INGAAS INP HETEROJUNCTION BIPOLAR-TRANSISTORS WITH A BURIED SUBCOLLECTOR

被引：5

作者：

FREI, MR ^{[1
]}

HAYES, JR ^{[1
]}

SONG, JI ^{[1
]}

COX, HM ^{[1
]}

CANEAU, C ^{[1
]}

机构：

[1] BELL COMMUN RES INC,RED BANK,NJ 07701

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 10期

关键词：

D O I：

10.1063/1.107644

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate the fabrication of an InGaAs/InP heterojunction bipolar transistor (HBT) with a reduced base-collector overlap area using selective epitaxy techniques. The process uses planarizing growth by chloride-transport vapor-phase epitaxy (VPE) to create a buried subcollector layer, followed by selective regrowth by organometallic VPE. The quality of the regrowth over the planarized substrates is evident from the dc characteristics of the HBT which show an ideality factor-eta = 1.05 for the base-emitter junction.

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页码：1193 / 1195

页数：3

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