INSITU MONITORING OF SURFACE KINETICS IN GAAS ATOMIC LAYER EPITAXY BY SURFACE PHOTOABSORPTION METHOD

被引：21

作者：

KOUKITU, A

IKEDA, H

SUZUKI, H

SEKI, H

机构：

[1] Department of Applied Chemistry, Tokyo University of Agriculture and Technology, Koganei, Tokyo

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1991年 / 30卷 / 10A期

关键词：

ATOMIC LAYER EPITAXY (ALE); HALOGEN TRANSPORT ALE; SURFACE PHOTOABSORPTION (SPA); INSITU MONITORING; GAAS;

D O I：

10.1143/JJAP.30.L1712

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The epitaxial growth reactions that proceed on the substrate surface during halogen transport atomic layer epitaxy (ALE) are observed directly with a surface photo-absorption method. The heat of desorption (48.5 kcal/mol) is obtained from the reflective intensity change. The value agrees well with the activation energy reported in classical halogen transport vapor-phase epitaxy. Based on the observation, a reaction mechanism is proposed. The self-limiting mechanism of halogen transport ALE is ascribed to the complete coverage of surface As sites by the adsorbed complex.

引用

页码：L1712 / L1714

页数：3

共 10 条

[1] MASS SPECTROMETRIC STUDIES OF VAPOR PHASE CRYSTAL GROWTH .1. GAASXP1-X SYSTEM (0 LESS THAN OR EQUAL TO X LESS THAN OR EQUAL TO 1) [J].

BAN, VS .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (09) :1473-&

[2] INSITU MONITORING OF GAAS GROWTH-PROCESS IN MOVPE BY SURFACE PHOTOABSORPTION METHOD [J].

KOBAYASHI, N ;

MAKIMOTO, T ;

YAMAUCHI, Y ;

HORIKOSHI, Y .

JOURNAL OF CRYSTAL GROWTH, 1991, 107 (1-4) :62-67

[3] PYROLYSIS OF TRIMETHYLGALLIUM ON (001) GAAS SURFACE INVESTIGATED BY SURFACE PHOTOABSORPTION [J].

KOBAYASHI, N ;

HORIKOSHI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (3A) :L319-L321

[4] OPTICAL INVESTIGATION ON THE GROWTH-PROCESS OF GAAS DURING MIGRATION-ENHANCED EPITAXY [J].

KOBAYASHI, N ;

HORIKOSHI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (11) :L1880-L1882

[5] MODELING OF CHEMICAL VAPOR-DEPOSITION .1. GENERAL-CONSIDERATIONS [J].

KOREC, J ;

HEYEN, M .

JOURNAL OF CRYSTAL GROWTH, 1982, 60 (02) :286-296

[6] VAPOR GROWTH KINETICS OF 3-5 COMPOUNDS IN A HYDROGEN INERT GAS MIXED CARRIER SYSTEM [J].

MIZUNO, O ;

WATANABE, H .

JOURNAL OF CRYSTAL GROWTH, 1975, 30 (02) :240-248

[7] EPITAXIAL GAAS KINETIC STUDIES - (001)ORIENTATION [J].

SHAW, DW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (05) :683-&

[8] KINETIC ASPECTS IN VAPOR-PHASE EPITAXY OF III-V COMPOUNDS [J].

SHAW, DW .

JOURNAL OF CRYSTAL GROWTH, 1975, 31 (DEC) :130-141

[9] KINETICS OF TRANSPORT AND EPITAXIAL GROWTH OF GAAS WITH A GA-ASCL3 SYSTEM [J].

SHAW, DW .

JOURNAL OF CRYSTAL GROWTH, 1971, 8 (01) :117-&

[10] GAAS ATOMIC LAYER EPITAXY BY HYDRIDE VPE [J].

USUI, A ;

SUNAKAWA, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (03) :L212-L214

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