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INVESTIGATION OF TRAP LEVELS IN GAAS SCHOTTKY DIODES BY ADMITTANCE SPECTROSCOPY

被引：9
作者：
HOFFMANN, HJ
REISSER, H
机构：
[1] Institut Für Angewandte Physik, Universität Karlsruhe
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1979年 / 51卷 / 02期
关键词：
D O I：
10.1002/pssa.2210510260
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
[No abstract available]
引用
收藏
页码：K171 / K174
页数：4
相关论文
共 10 条
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    LOSEE, DL
    [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (05) : 2204 - 2214
  • [3] Milnes A., 1973, DEEP IMPURITIES SEMI
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