DETERMINATION OF DEEP ELECTRON TRAPS IN GAAS BY TIME-RESOLVED CAPACITANCE MEASUREMENT

被引：13

作者：

WADA, O ^{[1
]}

YANAGISAWA, S ^{[1
]}

TAKANASHI, H ^{[1
]}

机构：

[1] FUJITSU LABS LTD,KAWASAKI,JAPAN

来源：

APPLIED PHYSICS | 1977年 / 13卷 / 01期

关键词：

D O I：

10.1007/BF00890712

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5 / 13

页数：9

共 26 条

[1] BEHAVIOR OF LATTICE DEFECTS IN GAAS
BLANC, J
WEISBERG, LR
BUBE, RH
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[2] PHOTOCAPACITANCE STUDIES IN HIGH-PURITY GAAS
BOIS, D
BOULOU, M
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1974, 22 (02): : 671 - 675
[3] IMPROVED METHOD OF DETERMINING DEEP IMPURITY LEVELS AND PROFILES IN SEMICONDUCTORS
GOTO, G
YANAGISAWA, S
WADA, O
TAKANASHI, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, 13 (07) : 1127 - 1133
[4] DETERMINATION OF DEEP-LEVEL ENERGY AND DENSITY PROFILES IN INHOMOGENEOUS SEMICONDUCTORS
GOTO, G
YANAGISAWA, S
WADA, O
TAKANASHI, H
[J]. APPLIED PHYSICS LETTERS, 1973, 23 (03) : 150 - 151
[5] SPECTRAL DISTRIBUTION OF PHOTOIONIZATION CROSS-SECTIONS BY PHOTOCONDUCTIVITY MEASUREMENTS
GRIMMEISS, HG
LEDEBO, LA
[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (05) : 2155 - 2162
[6] PREPARATION AND CHARACTERIZATION OF HIGH RESISTIVITY GAAS
HAISTY, RW
STRATTON, R
MEHAL, EW
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (JUL) : 829 - &
[7] MAJORITY-CARRIER TRAPS IN NORMAL-TYPE AND PARA-TYPE EPITAXIAL GAAS
HASEGAWA, F
MAJERFELD, A
[J]. ELECTRONICS LETTERS, 1975, 11 (14) : 286 - 288
[8] HOWER PL, 1969, 2ND P INT S GAAS DAL, P187
[9] VAPOR-PHASE EPITAXIAL-GROWTH OF GAAS IN A NITROGEN ATMOSPHERE
IHARA, M
DAZAI, K
RYUZAN, O
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (02) : 528 - 531
[10] STUDY OF ELECTRON TRAPS IN N-GAAS GROWN BY MOLECULAR-BEAM EPITAXY
LANG, DV
CHO, AY
GOSSARD, AC
ILEGEMS, M
WIEGMANN, W
[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (06) : 2558 - 2564

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