THERMAL ANNEALING OF LIGHT-INDUCED METASTABLE DEFECTS IN HYDROGENATED AMORPHOUS-SILICON NITRIDE

被引：44

作者：

TOBER, ED

KANICKI, J

CROWDER, MS

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

[2] IBM CORP,DIV STORAGE SYST PROD,SAN JOSE,CA 95193

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 14期

关键词：

D O I：

10.1063/1.106230

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Exposure to ultraviolet light induces paramagnetic, metastable defects in hydrogenated amorphous silicon nitride (a-SiN1.6:H) thin films. The thermally induced decay of the light-induced paramagnetic defects follows a stretched exponential dependence on annealing time, exp [- (t/tau)beta], and displays a temperature-dependent beta and tau. These results indicate that a multiple trapping or a trap-controlled hopping mechanism is involved in the annealing process with an apparent activation energy of 0.43 eV.

引用

页码：1723 / 1725

页数：3

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