IMPROVEMENT OF HOT-CARRIER AND RADIATION HARDNESSES IN METAL-OXIDE-NITRIDE-OXIDE SEMICONDUCTOR-DEVICES BY IRRADIATION-THEN-ANNEAL TREATMENTS

被引：6

作者：

CHANGLIAO, KS ^{[1
]}

HWU, JG ^{[1
]}

机构：

[1] NATL TAIWAN UNIV,DEPT ELECT ENGN,TAIPEI,TAIWAN

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1994年 / 41卷 / 04期

关键词：

D O I：

10.1109/16.278518

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The hardnessses of hot-carrier and radiation of metal-oxide nitride-oxide semiconductor (MONOS) devices can be improved by the irradiation-then-anneal (ITA) treatments. Each treatment includes an irradiation of Co-60 with a total dose of 1M rads(SiO2) and an anneal in N2 at 400-degrees-C for 10 min successively. This improvement can be explained by the release of SiO2/Si interfacial strain.

引用

页码：612 / 614

页数：3

共 10 条

[1]

CHANGLIAO KS, 1991, SOLID STATE ELECTRON, V34, P761

[2] THERMAL-OXIDATION RATE OF A SI3N4 FILM AND ITS MASKING EFFECT AGAINST OXIDATION OF SILICON [J].