IMPROVEMENT IN RADIATION HARDNESS OF OXIDE BY SUCCESSIVE IRRADIATION-THEN-ANNEAL TREATMENTS

被引：20

作者：

HWU, JG

FU, SL

机构：

来源：

SOLID-STATE ELECTRONICS | 1989年 / 32卷 / 08期

关键词：

D O I：

10.1016/0038-1101(89)90139-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：615 / 621

页数：7

共 20 条

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