THE RADIATION HARDNESS PROPERTY OF DRY OXIDE GROWN BY POSTOXIDATION COOLING IN OXYGEN AMBIENT

被引：7

作者：

HWU, JG

FU, SL

机构：

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1988年 / 46卷 / 03期

关键词：

D O I：

10.1007/BF00939267

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：221 / 227

页数：7

共 20 条

[1] HOLE REMOVAL IN THIN-GATE MOSFETS BY TUNNELING [J].

BENEDETTO, JM ;

BOESCH, HE ;

MCLEAN, FB ;

MIZE, JP .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1985, 32 (06) :3916-3920

[2] CURRENT UNDERSTANDING OF CHARGES IN THERMALLY OXIDIZED SILICON STRUCTURE [J].

DEAL, BE .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (06) :C198-C205

[3] CHARACTERISTICS OF SURFACE-STATE CHARGE (QSS) OF THERMALLY OXIDIZED SILICON [J].

DEAL, BE ;

SKLAR, M ;

GROVE, AS ;

SNOW, EH .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (03) :266-+

[4] PROCESS OPTIMIZATION OF RADIATION-HARDENED CMOS INTEGRATED-CIRCUITS [J].

DERBENWICK, GF ;

GREGORY, BL .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) :2151-2156

[5] LOW-TEMPERATURE HYSTERESIS EFFECTS IN METAL-OXIDE-SILICON CAPACITORS CAUSED BY SURFACE-STATE TRAPPING [J].

GOETZBERGER, A ;

IRVIN, JC .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1968, ED15 (12) :1009-+

[6] THE CHEMICAL-STRUCTURE OF TRAPPED CHARGE SITES FORMED AT THE SI/SIO2 INTERFACE BY IONIZING-RADIATION AS DETERMINED BY XPS [J].

GRUNTHANER, FJ ;

LEWIS, BF ;

MASERJIAN, J ;

MADHUKAR, A .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (03) :747-750

[7] XPS STUDIES OF STRUCTURE-INDUCED RADIATION EFFECTS AT THE SI-SIO2 INTERFACE [J].

GRUNTHANER, FJ ;

LEWIS, BF ;

ZAMINI, N ;

MASERJIAN, J ;

MADHUKAR, A .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1980, 27 (06) :1640-1646

[8] GENERATION KINETICS OF OXIDE CHARGES AND SURFACE-STATES DURING OXIDATION OF SILICON [J].

HAMASAKI, M .

SOLID-STATE ELECTRONICS, 1982, 25 (03) :205-211

[9] HOLE TRAPPING AND INTERFACE STATE GENERATION DURING BIAS-TEMPERATURE STRESS OF SIO2 LAYERS [J].

HAYWOOD, SK ;

DEKEERSMAECKER, RF .

APPLIED PHYSICS LETTERS, 1985, 47 (04) :381-383

[10] DIRECT INDICATION OF LATERAL NONUNIFORMITIES OF MOS CAPACITORS FROM THE NEGATIVE EQUIVALENT INTERFACE TRAP DENSITY BASED ON CHARGE-TEMPERATURE TECHNIQUE [J].

HWU, JG ;

WANG, WS .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1986, 40 (01) :41-46

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