GENERATION KINETICS OF OXIDE CHARGES AND SURFACE-STATES DURING OXIDATION OF SILICON

被引：17

作者：

HAMASAKI, M

机构：

来源：

SOLID-STATE ELECTRONICS | 1982年 / 25卷 / 03期

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D O I：

10.1016/0038-1101(82)90109-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：205 / 211

页数：7

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