HOLE TRAPPING AND INTERFACE STATE GENERATION DURING BIAS-TEMPERATURE STRESS OF SIO2 LAYERS

被引：20

作者：

HAYWOOD, SK

DEKEERSMAECKER, RF

机构：

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 04期

关键词：

D O I：

10.1063/1.96173

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：381 / 383

页数：3

共 20 条

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