RESIDUAL CHARGES EFFECT ON THE ANNEALING BEHAVIOR OF CO-60 IRRADIATED MOS CAPACITORS

被引：10

作者：

HWU, JG

LEE, GS

LEE, SC

WANG, WS

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1988年 / 35卷 / 01期

关键词：

D O I：

10.1109/23.12867

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：960 / 965

页数：6

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