IMPROVEMENT OF HOT-ELECTRON-INDUCED DEGRADATION IN MOS CAPACITORS BY REPEATED IRRADIATION-THEN-ANNEAL TREATMENTS

被引：12

作者：

HWU, JG

CHEN, JT

机构：

[1] Department of Electrical Engineering, National Taiwan University, Taipei, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 1990年 / 11卷 / 02期

关键词：

D O I：

10.1109/55.46935

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The SiO2/Si interface degradation due to hot-electron injection from silicon has been dramatically Improved by repeated irradiation-then-anneal treatments. Each treatment includes an irradiation of Co-60 with a total dose of 106 rd (SiO2) and an anneal in N2 for 10 min successively. It is found that the sensitivity to hot-electron-induced damage decreases gradually as the number of irradiation-then-anneal treatments increases. After three such treatments the MOS capacitor shows excellent behavior in terms of its hardness to hot-electron-induced degradation. © 1990 IEEE

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页码：82 / 84

页数：3

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