THERMALLY STIMULATED CURRENT MEASUREMENTS ON IRRADIATED MOS CAPACITORS

被引：30

作者：

SHANFIELD, Z

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1983年 / 30卷 / 06期

关键词：

D O I：

10.1109/TNS.1983.4333082

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：4064 / 4070

页数：7

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