THERMALLY STIMULATED HOLE CURRENTS IN SILICON DIOXIDE

被引：2

作者：

BAKOWSKI, M

机构：

来源：

PHYSICA SCRIPTA | 1981年 / 24卷 / 02期

关键词：

D O I：

10.1088/0031-8949/24/2/014

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：410 / 414

页数：5

共 15 条

[1] ELECTRON TRAPPING BY RADIATION-INDUCED CHARGE IN MOS DEVICES [J].

AITKEN, JM ;

YOUNG, DR .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (03) :1196-1198

[2] AVALANCHE INJECTION OF HOLES INTO SIO2 [J].

AITKEN, JM ;

YOUNG, DR .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1977, 24 (06) :2128-2134

[3] TRAPPING EFFECTS IN IRRADIATED AND AVALANCHE-INJECTED MOS CAPACITORS [J].

BAKOWSKI, M ;

COCKRUM, RH ;

ZAMANI, N ;

MASERJIAN, J ;

VISWANATHAN, CR .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1978, 25 (06) :1233-1238

[4] KINETIC-BEHAVIOR OF MOBILE IONS IN THE AL-SIO2-SI SYSTEM [J].

BOUDRY, MR ;

STAGG, JP .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) :942-950

[5] PROCESS OPTIMIZATION OF RADIATION-HARDENED CMOS INTEGRATED-CIRCUITS [J].

DERBENWICK, GF ;

GREGORY, BL .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) :2151-2156

[6] THERMALLY STIMULATED IONIC-CONDUCTIVITY OF SODIUM IN THERMAL SIO2 [J].

HICKMOTT, TW .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (06) :2583-2598

[7]

HINO R, 1979, J APPL PHYS, V50, P4881

[8] OXIDE THICKNESS DEPENDENCE OF HIGH-ENERGY ELECTRON-INDUCED, VUV-INDUCED, AND CORONA-INDUCED CHARGE IN MOS CAPACITORS [J].

HUGHES, GW ;

POWELL, RJ ;

WOODS, MH .

APPLIED PHYSICS LETTERS, 1976, 29 (06) :377-379

[9]

HUGHES GW, 1978, RCS HDLCR77088 REP

[10]

HUGHES GW, 1979, J APPL PHYS, V48, P5357

← 1 2 →