NATURAL INTRINSIC EX CENTER IN THERMAL SIO2 ON SI - O-17 HYPERFINE INTERACTION

被引:49
作者
STESMANS, A
SCHEERLINCK, F
机构
[1] Department of Physics, Katholieke Universiteit Leuven
来源
PHYSICAL REVIEW B | 1994年 / 50卷 / 08期
关键词
D O I
10.1103/PhysRevB.50.5204
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The atomic structure of the intrinsic EX defect naturally generated in thermal SiO2 on Si has been analyzed by electron spin resonance on 51% O-17 enriched (111)Si/SiO2 structures. Although the hyperfine structure could be only partly observed, the results indicate that the EX center is an excess-oxygen defect, the defect core incorporating several O atoms which appear not to be entirely equivalent sites with regard to hyperfine interaction. The emanating working model is a Si vacancy in SiO2, where an unpaired electron is delocalized over the four bordering O atoms, resulting in an effectively pure s state, which is subject to Si-29 superhyperfine interaction with neighboring Si sites.
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页码:5204 / 5212
页数:9
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