ELECTRICAL-PROPERTIES OF NANOMETER-WIDTH REFRACTORY-METAL LINES FABRICATED BY FOCUSED ION-BEAM AND OXIDE RESISTS

被引：7

作者：

KOSHIDA, N

WATANUKI, S

YOSHIDA, K

ENDO, K

KOMURO, M

ATODA, N

机构：

[1] ELECTROTECH LAB,TSUKUBA,IBARAKI 305,JAPAN

[2] SORTEC,TSUKUBA,IBARAKI 305,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1992年 / 31卷 / 12B期

关键词：

FOCUSED ION BEAM; INORGANIC RESIST; MOO3; WO3; THIN FILMS; MICROLITHOGRAPHY; REFRACTORY METAL WIRING;

D O I：

10.1143/JJAP.31.4483

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Nanometer-width refractory metal lines are generated on Si substrates with high resolution by focused ion beam (FIB) exposure to MoO3 and WO3 inorganic resists, development and subsequent reduction in dry H-2 gas. On the basis of some experiments for optimizing the process parameters, the electrical properties of fabricated fine Mo and W lines are evaluated in terms of the sheet resistance and its temperature dependence. A 40-nm-wide line did not show any signs of electromigration after the electrical measurements at current densities of 10(5) A / CM2 for several tens of minutes.

引用

页码：4483 / 4486

页数：4

共 8 条

[1] PREPARATION OF METALLIC W-FILM BY H2-REDUCTION OF WO3 ELECTRON-RESIST FILM [J].

BABA, M ;

OHTA, K ;

IKEDA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (10) :2581-2584

[2] HYDROGEN INSERTION IN OXIDES [J].

DICKENS, PG ;

CROUCHBAKER, S ;

WELLER, MT .

SOLID STATE IONICS, 1986, 18-9 :89-97

[3] FOCUSED ION-BEAM FABRICATION OF FINE METAL STRUCTURES BY OXIDE RESISTS [J].

KOSHIDA, N ;

WACHI, H ;

YOSHIDA, K ;

KOMURO, M ;

ATODA, N .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1990, 29 (10) :2299-2302

[4] MICROLITHOGRAPHIC BEHAVIOR OF TRANSITION-METAL OXIDE RESISTS EXPOSED TO FOCUSED ION-BEAM [J].

KOSHIDA, N ;

ICHINOSE, Y ;

OHTAKA, K ;

KOMURO, M ;

ATODA, N .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (05) :1093-1096

[5] 50 NM METAL LINE FABRICATION BY FOCUSED ION-BEAM AND OXIDE RESISTS [J].

KOSHIDA, N ;

YOSHIDA, K ;

WATANUKI, S ;

KOMURO, M ;

ATODA, N .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (11B) :3246-3249

[6] FOCUSED ION-BEAM LITHOGRAPHY WITH TRANSITION-METAL OXIDE RESISTS [J].

KOSHIDA, N ;

OHTAKA, K ;

ANDO, M ;

KOMURO, M ;

ATODA, N .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1989, 28 (10) :2090-2094

[7] MOO3 ELECTRON RESIST AND ITS APPLICATION TO FABRICATION OF MO FINE PATTERN [J].

KUMADA, F ;

OKAMOTO, M ;

BABA, M ;

IKEDA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (07) :L574-L576

[8] CRITICAL VOLUME FRACTION OF CRYSTALLINITY FOR CONDUCTIVITY PERCOLATION IN PHOSPHORUS-DOPED SI-F-H ALLOYS [J].

TSU, R ;

GONZALEZHERNANDEZ, J ;

CHAO, SS ;

LEE, SC ;

TANAKA, K .

APPLIED PHYSICS LETTERS, 1982, 40 (06) :534-535

← 1 →