ADVANCED X-RAY-SCATTERING TECHNIQUES FOR THE CHARACTERIZATION OF SEMICONDUCTING MATERIALS

被引：35

作者：

TANNER, BK ^{[1
]}

BOWEN, DK ^{[1
]}

机构：

[1] UNIV WARWICK,DEPT ENGN,COVENTRY CV4 7AL,W MIDLANDS,ENGLAND

来源：

JOURNAL OF CRYSTAL GROWTH | 1993年 / 126卷 / 01期

关键词：

D O I：

10.1016/0022-0248(93)90222-I

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The application of high resolution X-ray scattering to the characterization of single crystal semiconductors is reviewed. Double and triple axis diffraction are discussed and the present limits of their sensitivity are explored. Information from these diffraction techniques is contrasted with that obtained by grazing incidence X-ray reflectance measurements. It is shown that X-ray topographic methods, which provide a two-dimensional map of the lattice strains complement the information gained by the above area-integrated techniques.

引用

页码：1 / 18

页数：18

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