CLUSTER DYNAMICS ON VICINAL SURFACES

被引:6
作者
KENNY, S [1 ]
WILBY, MR [1 ]
MYERSBEAGHTON, AK [1 ]
VVEDENSKY, DD [1 ]
机构
[1] UNIV LONDON UNIV COLL, DEPT ELECT & ELECTR ENGN, LONDON WC1E 7JE, ENGLAND
来源
PHYSICAL REVIEW B | 1992年 / 46卷 / 16期
关键词
D O I
10.1103/PhysRevB.46.10345
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We have carried out a study of the dynamics of cluster formation during epitaxial growth an recovery on vicinal surfaces. By considering all of the possible configurations for up to four-atom clusters, we have been able to elucidate the role of different island types and shapes during the various stages of growth. Inclusion of species with slow decay pathways is crucial for describing the recovery of the surface morphology, since the breakup of stable configurations is the rate-determining step for the relaxation of the surface once the incoming flux has been turned off. We find that the recovery of the surface can be divided into two stages: an initial rapid decay due to activity of atoms with one nearest neighbor, and a subsequent slower stage is coupled up to third order to the breakup of the most stable species.
引用
收藏
页码:10345 / 10352
页数:8
相关论文
共 20 条
[1]   THE GROWTH OF CRYSTALS AND THE EQUILIBRIUM STRUCTURE OF THEIR SURFACES [J].
BURTON, WK ;
CABRERA, N ;
FRANK, FC .
PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1951, 243 (866) :299-358
[2]   EPITAXIAL-GROWTH QUALITY OPTIMIZATION BY SUPERCOMPUTER [J].
CLARKE, S ;
VVEDENSKY, DD .
APPLIED PHYSICS LETTERS, 1987, 51 (05) :340-342
[3]   INFLUENCE OF SURFACE-MORPHOLOGY UPON RECOVERY KINETICS DURING INTERRUPTED EPITAXIAL-GROWTH [J].
CLARKE, S ;
VVEDENSKY, DD ;
RICKETTS, MW .
JOURNAL OF CRYSTAL GROWTH, 1989, 95 (1-4) :28-31
[4]   CLUSTER-SIZE DISTRIBUTION DURING EPITAXIAL-GROWTH FROM THE VAPOR ON STRONGLY MISORIENTED SURFACES [J].
FUENZALIDA, V .
PHYSICAL REVIEW B, 1991, 44 (19) :10835-10842
[5]   HIGH SUPERSATURATION LAYER-BY-LAYER GROWTH - APPLICATION TO SI MBE [J].
FUENZALIDA, V ;
EISELE, I .
JOURNAL OF CRYSTAL GROWTH, 1986, 74 (03) :597-604
[6]  
FUENZALIDA V, 1985, 1ST P INT S SIL MOL, P86
[7]  
GARDINE RCW, 1983, HDB STOCHASTIC METHO
[8]   THE KINETICS OF FAST STEPS ON CRYSTAL-SURFACES AND ITS APPLICATION TO THE MOLECULAR-BEAM EPITAXY OF SILICON [J].
GHEZ, R ;
IYER, SS .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1988, 32 (06) :804-818
[9]   OBSERVATION OF SI(111) SURFACE-TOPOGRAPHY CHANGES DURING SI MOLECULAR-BEAM EPITAXIAL-GROWTH USING MICROPROBE REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION [J].
ICHIKAWA, M ;
DOI, T .
APPLIED PHYSICS LETTERS, 1987, 50 (17) :1141-1143
[10]   REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY BEHAVIOR DURING HOMOEPITAXIAL MOLECULAR-BEAM EPITAXY GROWTH OF GAAS AND IMPLICATIONS FOR GROWTH-KINETICS AND MECHANISMS [J].
LEWIS, BF ;
GRUNTHANER, FJ ;
MADHUKAR, A ;
LEE, TC ;
FERNANDEZ, R .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (05) :1317-1322