ATOMIC MIXING EFFECTS ON HIGH FLUENCE GE IMPLANTATION INTO SI AT 40 KEV

被引:6
作者
GRASMARTI, A [1 ]
JIMENEZRODRIGUEZ, JJ [1 ]
PEONFERNANDEZ, J [1 ]
RODRIGUEZVIDAL, M [1 ]
TOGNETTI, NP [1 ]
CARTER, G [1 ]
NOBES, MJ [1 ]
ARMOUR, DG [1 ]
机构
[1] UNIV SALFORD,DEPT ELECT ENGN,SALFORD M5 4WT,LANCS,ENGLAND
来源
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH | 1982年 / 194卷 / 1-3期
关键词
D O I
10.1016/0029-554X(82)90562-6
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
引用
收藏
页码:449 / 451
页数:3
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