ATOMIC MIXING EFFECTS ON HIGH FLUENCE GE IMPLANTATION INTO SI AT 40 KEV

被引：6

作者：

GRASMARTI, A ^{[1
]}

JIMENEZRODRIGUEZ, JJ ^{[1
]}

PEONFERNANDEZ, J ^{[1
]}

RODRIGUEZVIDAL, M ^{[1
]}

TOGNETTI, NP ^{[1
]}

CARTER, G ^{[1
]}

NOBES, MJ ^{[1
]}

ARMOUR, DG ^{[1
]}

机构：

[1] UNIV SALFORD,DEPT ELECT ENGN,SALFORD M5 4WT,LANCS,ENGLAND

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH | 1982年 / 194卷 / 1-3期

关键词：

D O I：

10.1016/0029-554X(82)90562-6

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：449 / 451

页数：3

共 10 条

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[8] DISTORTION OF DEPTH PROFILES DURING SPUTTERING .1. GENERAL DESCRIPTION OF COLLISIONAL MIXING
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