A STUDY OF IRON-RELATED CENTERS IN HEAVILY BORON-DOPED SILICON BY DEEP-LEVEL TRANSIENT SPECTROSCOPY

被引:16
作者
AWADELKARIM, OO [1 ]
MONEMAR, B [1 ]
机构
[1] LINKOPING UNIV,DEPT PHYS & MEASUREMENT TECHNOL,S-58183 LINKOPING,SWEDEN
关键词
D O I
10.1063/1.342090
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
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页码:6306 / 6310
页数:5
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