DIRECT OBSERVATION OF DISLOCATIONS IN A LEC-GAP CRYSTAL BY LIGHT-SCATTERING METHOD

[1] AMELINCKS S, 1964, DIRECT OBSERVATION D, P55

[2] Guseva I. N., 1968, Journal of Crystal Growth, V3-4Spe, P723, DOI 10.1016/0022-0248(68)90253-4

[3] HIGH-EFFICIENCY RED-EMITTING GAP DIODES GROWN BY SINGLE EPITAXY ON SOLUTION-GROWN (ETA APPROXIMATELY 6 PERCENT) AND CZOCHRALSKI (ETA APPROXIMATELY 2 PERCENT) SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1970, 16 (12) : 477 - &

[4] ETCHING STUDIES OF IMPURITY PRECIPITATES IN PULLED GAP CRYSTALS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (07) : 1190 - &

[5] RED PHOTOLUMINESCENT EFFICIENCY AND MINORITY-CARRIER LIFETIME OF GAP(ZN,O) PULLED FROM NONSTOICHIOMETRIC MELTS [J]. APPLIED PHYSICS LETTERS, 1971, 19 (10) : 394 - +

[6] ELECTRICAL AND OPTICAL PROPERTIES OF HEAT-TREATED SILICON [J]. PHYSICAL REVIEW, 1957, 105 (06): : 1751 - 1756

[7] NEW METHOD OF GROWING GAP CRYSTALS FOR LIGHT-EMITTING DIODES [J]. PROCEEDINGS OF THE IEEE, 1973, 61 (07) : 884 - 890

[8] COMPARISON OF LIQUID-ENCAPSULATED AND SOLUTION-GROWN SUBSTRATES FOR EFFICIENT GAP DIODES [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (12) : 4984 - +

[9] PROPERTIES OF GAP SINGLE CRYSTALS GROWN BY LIQUID ENCAPSULATED PULLING [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (02) : 306 - &

[10] ETCH PITS IN GALLIUM ARSENIDE [J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (03) : 611 - 612

[1] AMELINCKS S, 1964, DIRECT OBSERVATION D, P55

[2] Guseva I. N., 1968, Journal of Crystal Growth, V3-4Spe, P723, DOI 10.1016/0022-0248(68)90253-4

[3] HIGH-EFFICIENCY RED-EMITTING GAP DIODES GROWN BY SINGLE EPITAXY ON SOLUTION-GROWN (ETA APPROXIMATELY 6 PERCENT) AND CZOCHRALSKI (ETA APPROXIMATELY 2 PERCENT) SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1970, 16 (12) : 477 - &

[4] ETCHING STUDIES OF IMPURITY PRECIPITATES IN PULLED GAP CRYSTALS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (07) : 1190 - &

[5] RED PHOTOLUMINESCENT EFFICIENCY AND MINORITY-CARRIER LIFETIME OF GAP(ZN,O) PULLED FROM NONSTOICHIOMETRIC MELTS [J]. APPLIED PHYSICS LETTERS, 1971, 19 (10) : 394 - +

[6] ELECTRICAL AND OPTICAL PROPERTIES OF HEAT-TREATED SILICON [J]. PHYSICAL REVIEW, 1957, 105 (06): : 1751 - 1756

[7] NEW METHOD OF GROWING GAP CRYSTALS FOR LIGHT-EMITTING DIODES [J]. PROCEEDINGS OF THE IEEE, 1973, 61 (07) : 884 - 890

[8] COMPARISON OF LIQUID-ENCAPSULATED AND SOLUTION-GROWN SUBSTRATES FOR EFFICIENT GAP DIODES [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (12) : 4984 - +

[9] PROPERTIES OF GAP SINGLE CRYSTALS GROWN BY LIQUID ENCAPSULATED PULLING [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (02) : 306 - &

[10] ETCH PITS IN GALLIUM ARSENIDE [J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (03) : 611 - 612