TIME RESOLVED TEMPERATURE-MEASUREMENT OF PULSED LASER IRRADIATED GERMANIUM BY THIN-FILM THERMOCOUPLE

被引：31

作者：

BAERI, P

CAMPISANO, SU

RIMINI, E

ZHANG, JP

机构：

来源：

APPLIED PHYSICS LETTERS | 1984年 / 45卷 / 04期

关键词：

D O I：

10.1063/1.95234

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：398 / 400

页数：3

共 9 条

[1]

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[7] TIME-RESOLVED TEMPERATURE-MEASUREMENT OF PICOSECOND LASER IRRADIATED SILICON [J].

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[8]

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[9] MEASUREMENT OF LATTICE TEMPERATURE OF SILICON DURING PULSED LASER ANNEALING [J].

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PHYSICAL REVIEW LETTERS, 1981, 47 (05) :356-358

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