COMPARISON OF EXPERIMENTAL AND THEORETICAL CARRIER CONCENTRATIONS IN HEAVILY DOPED N-TYPE SILICON

被引：13

作者：

FINETTI, M ^{[1
]}

MAZZONE, AM ^{[1
]}

PASSARI, L ^{[1
]}

PIETRA, S ^{[1
]}

SUSI, E ^{[1
]}

机构：

[1] CNR, LAMEL, I-40126 BOLOGNA, ITALY

来源：

JOURNAL OF APPLIED PHYSICS | 1976年 / 47卷 / 10期

关键词：

D O I：

10.1063/1.322383

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4590 / 4592

页数：3

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