Atomic surface structure of the phosphorous-terminated InP(001) grown by MOVPE

被引:42
作者
Vogt, P
Hannappel, T
Visbeck, S
Knorr, K
Esser, N
Richter, W
机构
[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany
[2] Hahn Meitner Inst Kernforsch Berlin GmbH, D-14109 Berlin, Germany
关键词
D O I
10.1103/PhysRevB.60.R5117
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Scanning tunneling microscopy (STM) was used to investigate the microscopic structure of the phosphorous (P)-rich so-called (2 x 1) reconstruction of InP(001). The samples were homoepitaxially grown in a commercial metal-organic vapor phase epitaxy reactor and then transferred under ultra high vacuum (UHV) conditions into a separate UHV- chamber equipped with low-energy electron diffraction (LEED) and scanning tunneling microscopy (STM). After transfer LEED patterns show a(2 x 1)/(2 x 2) periodicity with streaks in the [110] direction. STM images display rows in the [110] direction formed by randomly distributed (2 x 2)/(2 x 2 )lc(4 x 2)-like local structures plus many defects. This disorder effect explains the (2 x 1)-like LEED pattern. The structure of the rows is interpreted in terms of P dimers directed along the [110] direction which are adsorbed on a complete P layer underneath. Prolonged annealing at 350 degrees C causes successive desorption of single P dimers as monitored by STM. The LEED pattern remains essentially unaffected and STM images with atomic resolution reveal zig-zag chains in the [110] direction separated by twice the lattice constant. Two adjacent rows can be in or out of phase thus resulting in either p(2 x 2) or c(4 x 2) reconstructions. The structure of the rows can be explained in terms of buckled P dimers oriented along the [110] direction on a complete In layer. [S0163-1829(99)51532-4].
引用
收藏
页码:R5117 / R5120
页数:4
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