Characteristics of [6]phenacene thin film field-effect transistor
被引:41
作者:
Komura, Noriko
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Okayama Univ, Surface Sci Res Lab, Okayama 7008530, JapanOkayama Univ, Surface Sci Res Lab, Okayama 7008530, Japan
Komura, Noriko
[1
]
Goto, Hidenori
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Okayama Univ, Surface Sci Res Lab, Okayama 7008530, JapanOkayama Univ, Surface Sci Res Lab, Okayama 7008530, Japan
Goto, Hidenori
[1
]
He, Xuexia
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Okayama Univ, Surface Sci Res Lab, Okayama 7008530, JapanOkayama Univ, Surface Sci Res Lab, Okayama 7008530, Japan
He, Xuexia
[1
]
Mitamura, Hiroki
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Okayama Univ, Surface Sci Res Lab, Okayama 7008530, JapanOkayama Univ, Surface Sci Res Lab, Okayama 7008530, Japan
Mitamura, Hiroki
[1
]
Eguchi, Ritsuko
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Okayama Univ, Surface Sci Res Lab, Okayama 7008530, JapanOkayama Univ, Surface Sci Res Lab, Okayama 7008530, Japan
Eguchi, Ritsuko
[1
]
Kaji, Yumiko
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Okayama Univ, Surface Sci Res Lab, Okayama 7008530, JapanOkayama Univ, Surface Sci Res Lab, Okayama 7008530, Japan
Kaji, Yumiko
[1
]
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Okamoto, Hideki
[2
]
Sugawara, Yasuyuki
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机构:
Kuramoto Seisakusho Co Ltd, Kurihara 9895508, JapanOkayama Univ, Surface Sci Res Lab, Okayama 7008530, Japan
Sugawara, Yasuyuki
[3
]
Gohda, Shin
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NARD Co Ltd, Amagasaki, Hyogo 6600805, JapanOkayama Univ, Surface Sci Res Lab, Okayama 7008530, Japan
Gohda, Shin
[4
]
Sato, Kaori
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NARD Co Ltd, Amagasaki, Hyogo 6600805, JapanOkayama Univ, Surface Sci Res Lab, Okayama 7008530, Japan
Sato, Kaori
[4
]
Kubozono, Yoshihiro
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Okayama Univ, Surface Sci Res Lab, Okayama 7008530, Japan
Okayama Univ, Res Ctr New Funct Mat Energy Prod Storage & Trans, Okayama 7008530, JapanOkayama Univ, Surface Sci Res Lab, Okayama 7008530, Japan
Kubozono, Yoshihiro
[1
,5
]
机构:
[1] Okayama Univ, Surface Sci Res Lab, Okayama 7008530, Japan
[2] Okayama Univ, Div Chem & Biochem, Okayama 7008530, Japan
[3] Kuramoto Seisakusho Co Ltd, Kurihara 9895508, Japan
[4] NARD Co Ltd, Amagasaki, Hyogo 6600805, Japan
[5] Okayama Univ, Res Ctr New Funct Mat Energy Prod Storage & Trans, Okayama 7008530, Japan
Transistor characteristics are studied for field-effect transistors (FETs) with thin films of [6]phenacene, which has six benzene rings and W-shape structure. The molecular alignment preferable for FET transport is found to be formed in [6]phenacene thin films. The transistor shows clear p-channel FET characteristics with field-effect mobility mu as high as 3.7 cm(2) V-1 s(-1). The similar O-2 sensing properties to picene FET are observed in [6]phenacene thin film FET. The bias stress properties are observed in [6]phenacene thin film FET. The pulse-voltage application suppresses the bias-stress effect and it enables a continuous O-2 sensing in [6]phenacene FET. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4747201]