Characteristics of [6]phenacene thin film field-effect transistor

被引:41
作者
Komura, Noriko [1 ]
Goto, Hidenori [1 ]
He, Xuexia [1 ]
Mitamura, Hiroki [1 ]
Eguchi, Ritsuko [1 ]
Kaji, Yumiko [1 ]
Okamoto, Hideki [2 ]
Sugawara, Yasuyuki [3 ]
Gohda, Shin [4 ]
Sato, Kaori [4 ]
Kubozono, Yoshihiro [1 ,5 ]
机构
[1] Okayama Univ, Surface Sci Res Lab, Okayama 7008530, Japan
[2] Okayama Univ, Div Chem & Biochem, Okayama 7008530, Japan
[3] Kuramoto Seisakusho Co Ltd, Kurihara 9895508, Japan
[4] NARD Co Ltd, Amagasaki, Hyogo 6600805, Japan
[5] Okayama Univ, Res Ctr New Funct Mat Energy Prod Storage & Trans, Okayama 7008530, Japan
基金
日本科学技术振兴机构;
关键词
WATER;
D O I
10.1063/1.4747201
中图分类号
O59 [应用物理学];
学科分类号
摘要
Transistor characteristics are studied for field-effect transistors (FETs) with thin films of [6]phenacene, which has six benzene rings and W-shape structure. The molecular alignment preferable for FET transport is found to be formed in [6]phenacene thin films. The transistor shows clear p-channel FET characteristics with field-effect mobility mu as high as 3.7 cm(2) V-1 s(-1). The similar O-2 sensing properties to picene FET are observed in [6]phenacene thin film FET. The bias stress properties are observed in [6]phenacene thin film FET. The pulse-voltage application suppresses the bias-stress effect and it enables a continuous O-2 sensing in [6]phenacene FET. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4747201]
引用
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页数:4
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