Nonuniform segregation of Ga at AlAs/GaAs heterointerfaces

被引：60

作者：

Braun, W

Trampert, A

Daweritz, L

Ploog, KH

机构：

[1] Paul-Drude-Institut für Festkörperelektronik, D-10117 Berlin

来源：

PHYSICAL REVIEW B | 1997年 / 55卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.55.1689

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Segregation at GaAs/AlAs (001) heterointerfaces has been studied experimentally by an in situ electron diffraction technique during molecular-beam epitaxy and by ex situ transmission electron microscopy. Whereas the GaAs-on-AlAs interface is abrupt, we find Ga segregating up to 20 crystal planes when depositing AlAs on GaAs(001). The measurements indicate an anisotropic in-plane structure of this interface with elongated AlxGa1-xAs regions extending along [<(110) over bar>]. Our findings provide insight into both the segregation mechanism and electron diffraction from growing surfaces at glancing angles.

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页码：1689 / 1695

页数：7

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