The application of high energy ion implantation for silicon radiation detectors

被引：18

作者：

vonBorany, J

Schmidt, B

Grotzschel, R

机构：

[1] Forschungszentrum Rossendorf e.V., Inst. Ionenstrahlphysik M., D-01314 Dresden

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1996年 / 377卷 / 2-3期

关键词：

D O I：

10.1016/0168-9002(96)00235-5

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

High energy ion implantation of phosphorous and boron in the MeV-range has been applied to modify the vertical electric field distribution of silicon pn-junction radiation detectors. Low dose phosphorous implantation (10 MeV, 10(11)-10(12) cm(-2)) was used to realize detectors with local high field regions characterized by an internal electric field strength up to 150 kV/cm. A field related decrease of the effective window down to 35 nm and a corresponding reduction of the pulse height defect (PHD) for the spectroscopy of low energy heavy ions have been obtained. Additional subjects for the application of the MeV-ion implantation technique are briefly summarized.

引用

页码：514 / 520

页数：7

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