A new approach to adaptive patterning of conductors and superconductors by solution stamping nanolithography (SSNL) was analyzed. SSNL simplifies the feature-defining process and bypasses etching steps that can damage materials. In SSNL, a polydimethylsiloxane (PDMS) elastomeric stamp containing relief patterns is first inked with a precursor solution of inorganic materials and then placed on a substrate of choice to transfer this ink from the stamp to the substrate. The new approach can be used to print patterned, functional oxides on flexible or curved substrates without the need for subsequent etching.