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Solution-processed ambipolar vertical organic field effect transistor

被引：47
作者：
Ben-Sasson, Ariel J. [1 ,2 ]
Chen, Zhihua [3 ]
Facchetti, Antonio [3 ]
Tessler, Nir [1 ,2 ]
机构：
[1] Technion Israel Inst Technol, Dept Elect Engn, IL-32000 Haifa, Israel
[2] Technion Israel Inst Technol, Sara & Moshe Zisapel Nanoelect Ctr, IL-32000 Haifa, Israel
[3] Polyera Corp, Skokie, IL 60077 USA
来源：
APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 26期
基金：
以色列科学基金会;
关键词：
CHARGE INJECTION; ELECTRON; TRANSPORT; POLYMER;
D O I：
10.1063/1.4731774
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report on a solution-processed ambipolar patterned-electrode vertical organic field effect transistor (PE-VOFET) based on the P(NDI2OD-T2) polymer. The Schottky barrier-based VOFET operation uniquely facilitates an ambipolar transport using a single anode-cathode-electrode and a single semiconductor material. Pin-hole free sub-100 nanometer channel length devices are obtained with no high resolution patterning owing to both the polymer's smooth morphology and the underlining patterned-electrode's flatness. The VOFET exhibits n-type on/off ratio >10(3), current density >50 [mAcm(-2)] under V-DS = 5V, as well as p-type operation. Prone to design and optimization, the ambipolar PE-VOFET is a promising platform for organic complementary circuit technology. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4731774]
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页数：4
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