Patterned electrode vertical field effect transistor fabricated using block copolymer nanotemplates

被引：83

作者：

Ben-Sasson, Ariel J. ^{[1
]}

Avnon, Eran ^{[1
]}

Ploshnik, Elina ^{[2
,3
]}

Globerman, Oded ^{[1
]}

Shenhar, Roy ^{[2
,3
]}

Frey, Gitti L. ^{[4
]}

Tessler, Nir ^{[1
]}

机构：

[1] Technion Israel Inst Technol, Dept Elect Engn, Zisapel Nanoelect Ctr, IL-32000 Haifa, Israel

[2] Hebrew Univ Jerusalem, Inst Chem, IL-91904 Jerusalem, Israel

[3] Hebrew Univ Jerusalem, Ctr Nanosci & Nanotechnol, IL-91904 Jerusalem, Israel

[4] Technion Israel Inst Technol, Dept Mat Engn, IL-32000 Haifa, Israel

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 21期

关键词：

elemental semiconductors; fullerenes; nanolithography; organic field effect transistors; polymer blends; self-assembly; semiconductor thin films; soft lithography; THIN-FILMS;

D O I：

10.1063/1.3266855

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the design and implementation of a vertical organic field effect transistor which is compatible with standard device fabrication technology and is well described by a self consistent device model. The active semiconductor is a film of C(60) molecules, and the device operation is based on the architecture of the nanopatterned source electrode. The relatively high resolution fabrication process and maintaining the low-cost and simplicity associated with organic electronics, necessitates unconventional fabrication techniques such as soft lithography. Block copolymer self-assembled nanotemplates enable the production of conductive, gridlike metal electrode. The devices reported here exhibit On/Off ratio of 10(4).

引用

页数：3

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