Evolution in surface morphology of epitaxial graphene layers on SiC induced by controlled structural strain

被引：20

作者：

Ferralis, Nicola ^{[1
]}

Kawasaki, Jason ^{[1
]}

Maboudian, Roya ^{[1
]}

Carraro, Carlo ^{[1
]}

机构：

[1] Univ Calif Berkeley, Dept Chem Engn, Berkeley, CA 94720 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 19期

基金：

美国国家科学基金会;

关键词：

annealing; carbon; compressive strength; epitaxial layers; internal stresses; nanostructured materials; surface morphology;

D O I：

10.1063/1.3028091

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The evolution in the surface morphology of epitaxial graphene films and 6H-SiC(0001) substrates is studied by electron channeling contrast imaging. Whereas film thickness is determined by growth temperature only, increasing growth times at constant temperature affects both internal stress and film morphology. Annealing times in excess of 8-10 min lead to an increase in the mean square roughness of SiC step edges to which graphene films are pinned, resulting in compressively stressed films at room temperature. Shorter annealing times produce minimal changes in the morphology of the terrace edges and result in nearly stress-free films upon cooling to room temperature.

引用

页数：3

共 15 条

[1] Ultrathin epitaxial graphite: 2D electron gas properties and a route toward graphene-based nanoelectronics [J].

Berger, C ;

Song, ZM ;

Li, TB ;

Li, XB ;

Ogbazghi, AY ;

Feng, R ;

Dai, ZT ;

Marchenkov, AN ;

Conrad, EH ;

First, PN ;

de Heer, WA .

JOURNAL OF PHYSICAL CHEMISTRY B, 2004, 108 (52) :19912-19916

[2] Electronic confinement and coherence in patterned epitaxial graphene [J].

Berger, Claire ;

Song, Zhimin ;

Li, Xuebin ;

Wu, Xiaosong ;

Brown, Nate ;

Naud, Cecile ;

Mayou, Didier ;

Li, Tianbo ;

Hass, Joanna ;

Marchenkov, Atexei N. ;

Conrad, Edward H. ;

First, Phillip N. ;

de Heer, Wait A. .

SCIENCE, 2006, 312 (5777) :1191-1196

[3] Epitaxial graphene [J].

de Heer, Walt A. ;

Berger, Claire ;

Wu, Xiaosong ;

First, Phillip N. ;

Conrad, Edward H. ;

Li, Xuebin ;

Li, Tianbo ;

Sprinkle, Michael ;

Hass, Joanna ;

Sadowski, Marcin L. ;

Potemski, Marek ;

Martinez, Gerard .

SOLID STATE COMMUNICATIONS, 2007, 143 (1-2) :92-100

[4] Evidence of Structural Strain in Epitaxial Graphene Layers on 6H-SiC(0001) [J].

Ferralis, Nicola ;

Maboudian, Roya ;

Carraro, Carlo .

PHYSICAL REVIEW LETTERS, 2008, 101 (15)

[5] Heteroepitaxial graphite on 6H-SiC(0001):: Interface formation through conduction-band electronic structure [J].

Forbeaux, I ;

Themlin, JM ;

Debever, JM .

PHYSICAL REVIEW B, 1998, 58 (24) :16396-16406

[6] Pit formation during graphene synthesis on SiC(0001):: In situ electron microscopy [J].

Hannon, J. B. ;

Tromp, R. M. .

PHYSICAL REVIEW B, 2008, 77 (24)

[7] Highly ordered graphene for two dimensional electronics [J].

Hass, J. ;

Feng, R. ;

Li, T. ;

Li, X. ;

Zong, Z. ;

de Heer, W. A. ;

First, P. N. ;

Conrad, E. H. ;

Jeffrey, C. A. ;

Berger, C. .

APPLIED PHYSICS LETTERS, 2006, 89 (14)

[8] The growth and morphology of epitaxial multilayer graphene [J].

Hass, J. ;

de Heer, W. A. ;

Conrad, E. H. .

JOURNAL OF PHYSICS-CONDENSED MATTER, 2008, 20 (32)

[9]

Jain S.C., 1994, GERMANIUM SILICON ST

[10] Special issue on strained-Si heterostructures and devices - Editorial [J].

Maiti, CK .

SOLID-STATE ELECTRONICS, 2004, 48 (08) :1255-1255

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