Spatial distribution of oxygen vacancies in Cr-doped SrTiO3 during an electric-field-driven insulator-to-metal transition

被引：21

作者：

Andreasson, B. P. ^{[1
]}

Janousch, M. ^{[1
]}

Staub, U. ^{[1
]}

Meijer, G. I. ^{[2
]}

机构：

[1] Paul Scherrer Inst, CH-5232 Villigen, Switzerland

[2] Zurich Res Lab, IBM Res, CH-8803 Ruschlikon, Switzerland

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 01期

关键词：

chromium; fluorescence; metal-insulator transition; percolation; strontium compounds; vacancies (crystal); X-ray fluorescence analysis; NONVOLATILE MEMORY; SINGLE-CRYSTALS; RESISTANCE; FILMS;

D O I：

10.1063/1.3069140

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Spatially resolved x-ray fluorescence maps are presented that show the introduction and the evolution of oxygen vacancies in chromium-doped strontium titanate during an electric-field-driven insulator-to-metal transition. The vacancies are introduced at the anode and diffuse through the crystal toward the cathode. The spatial distribution of vacancies is explained by a model describing the electrical breakdown as a percolation process. Strong differences in the vacancy distribution were found when the transition took place in air and in a hydrogen-enriched atmosphere. In air, the vacancies disappeared from the surface, whereas in the reducing hydrogen atmosphere, they remained at the surface.

引用

页数：3

共 22 条

[1] Reproducible switching effect in thin oxide films for memory applications [J].