Field-programmable rectification in rutile TiO2 crystals

被引:90
作者
Jameson, John R. [1 ]
Fukuzumi, Yoshiaki
Wang, Zheng
Griffin, Peter
Tsunoda, Koji
Meijer, G. Ingmar
Nishi, Yoshio
机构
[1] Stanford Univ, Ctr Integrated Syst, Stanford, CA 94305 USA
[2] Fujitsu Labs Ltd, Atsugi, Kanagawa 2430197, Japan
[3] Zurich Res Lab, IBM Res, CH-8803 Ruschlikon, Switzerland
基金
美国国家科学基金会;
关键词
D O I
10.1063/1.2769961
中图分类号
O59 [应用物理学];
学科分类号
摘要
The authors report "field-programmable rectification" in crystals of rutile TiO2. A "programming" voltage is applied between two Pt electrodes on the surface of a crystal. Afterwards, current can pass in the direction of the programming voltage, but not in the reverse direction. The polarity of the rectification can be reversed by applying a programming voltage of opposite sign. The effect was observed on the (110) and (100) surfaces, but not the (001) surface. The proposed mechanism is field-induced motion of oxygen vacancies, which pile up under the negative terminal, eliminating a Schottky barrier, but leaving one at the positive terminal intact.
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页数:3
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共 15 条
[1]   Field-driven hysteretic and reversible resistive switch at the Ag-Pr0.7Ca0.3MnO3 interface [J].
Baikalov, A ;
Wang, YQ ;
Shen, B ;
Lorenz, B ;
Tsui, S ;
Sun, YY ;
Xue, YY ;
Chu, CW .
APPLIED PHYSICS LETTERS, 2003, 83 (05) :957-959
[2]   Reproducible switching effect in thin oxide films for memory applications [J].
Beck, A ;
Bednorz, JG ;
Gerber, C ;
Rossel, C ;
Widmer, D .
APPLIED PHYSICS LETTERS, 2000, 77 (01) :139-141
[3]   Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition -: art. no. 033715 [J].
Choi, BJ ;
Jeong, DS ;
Kim, SK ;
Rohde, C ;
Choi, S ;
Oh, JH ;
Kim, HJ ;
Hwang, CS ;
Szot, K ;
Waser, R ;
Reichenberg, B ;
Tiedke, S .
JOURNAL OF APPLIED PHYSICS, 2005, 98 (03)
[4]   Resistive switching in metal-ferroelectric-metal junctions [J].
Contreras, JR ;
Kohlstedt, H ;
Poppe, U ;
Waser, R ;
Buchal, C ;
Pertsev, NA .
APPLIED PHYSICS LETTERS, 2003, 83 (22) :4595-4597
[5]   ELECTRICAL AND OPTICAL PROPERTIES OF RUTILE SINGLE CRYSTALS [J].
CRONEMEYER, DC .
PHYSICAL REVIEW, 1952, 87 (05) :876-886
[6]   High-speed resistive switching of TiO2/TiN nano-crystalline thin film [J].
Fujimoto, M ;
Koyama, H ;
Hosoi, Y ;
Ishihara, K ;
Kobayashi, S .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2006, 45 (8-11) :L310-L312
[7]   LOW-FREQUENCY NEGATIVE RESISTANCE IN THIN ANODIC OXIDE FILMS [J].
HICKMOTT, TW .
JOURNAL OF APPLIED PHYSICS, 1962, 33 (09) :2669-&
[8]   DIFFUSION OF OXYGEN VACANCIES IN REDUCED RUTILE (TIO2) [J].
IGUCHI, E ;
YAJIMA, K .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1972, 32 (05) :1415-&
[9]   Role of oxygen vacancies in Cr-doped SrTiO3 for resistance-change memory [J].
Janousch, Markus ;
Meijer, G. Ingmar ;
Staub, Urs ;
Delley, Bernard ;
Karg, Siegfried F. ;
Andreasson, Bjorn P. .
ADVANCED MATERIALS, 2007, 19 (17) :2232-+
[10]   Study of transport and dielectric of resistive memory states in NiO thin film [J].
Kim, MG ;
Kim, SM ;
Choi, EJ ;
Moon, SE ;
Park, J ;
Kim, HC ;
Park, BH ;
Lee, MJ ;
Seo, S ;
Seo, DH ;
Ahn, SE ;
Yoo, IK .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2005, 44 (42-45) :L1301-L1303