Ferroelectricity in Gd-Doped HfO2 Thin Films

被引：248

作者：

Mueller, S. ^{[1
]}

Adelmann, C. ^{[2
]}

Singh, A. ^{[1
]}

Van Elshocht, S. ^{[2
]}

Schroeder, U. ^{[1
]}

Mikolajick, T. ^{[1
,3
]}

机构：

[1] Namlab gGmbH, D-01187 Dresden, Germany

[2] IMEC, B-3001 Louvain, Belgium

[3] Tech Univ Dresden, Chair Nanoelect Mat, D-01062 Dresden, Germany

来源：

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 2012年 / 1卷 / 06期

关键词：

POLARIZATION;

D O I：

10.1149/2.002301jss

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The incorporation of Gd into HfO2 thin films is shown to induce ferroelectricity. A significant influence of electric field cycling on both polarization as well as small-signal capacitance-voltage measurements can be observed. X-ray diffraction measurements are supported by infrared absorption analysis and give further evidence of the previously proposed non-centrosymmetric transition phase of space group Pbc2(1). (C) 2012 The Electrochemical Society. All rights reserved.

引用

收藏

页码：N123 / N126

页数：4

相关论文

共 21 条

[11] Study of interfacial reactions and phase stabilization of mixed Sc, Dy, Hf high-k oxides by attenuated total reflectance infrared spectroscopy [J].

Hardy, A. ;

Adelmann, C. ;

Van Elshocht, S. ;

Van den Rul, H. ;

Van Bael, M. K. ;

De Gendt, S. ;

D'Olieslaeger, M. ;

Heyns, M. ;

Kittl, J. A. ;

Mullens, J. .

APPLIED SURFACE SCIENCE, 2009, 255 (17) :7812-7817

[12] Removal of 90° domain pinning in (100) Pb(Zr0.15Ti0.85)O3 thin films by pulsed operation [J].

Kohli, M ;

Muralt, P ;

Setter, N .

APPLIED PHYSICS LETTERS, 1998, 72 (24) :3217-3219

[13]

Kohli M, 1999, FERROELECTRICS, V225, P961

[14] DIELECTRIC AND X-RAY STUDIES OF CACHIBA1-CHITIO3 AND CACHISR1-CHITIO3 [J].

MITSUI, T ;

WESTPHAL, WB .

PHYSICAL REVIEW, 1961, 124 (05) :1354-&

[15] Ferroelectricity in yttrium-doped hafnium oxide [J].

Mueller, J. ;

Schroeder, U. ;

Boescke, T. S. ;

Mueller, I. ;

Boettger, U. ;

Wilde, L. ;

Sundqvist, J. ;

Lemberger, M. ;

Kuecher, P. ;

Mikolajick, T. ;

Frey, L. .

JOURNAL OF APPLIED PHYSICS, 2011, 110 (11)

[16] Nanosecond Polarization Switching and Long Retention in a Novel MFIS-FET Based on Ferroelectric HfO2 [J].

Mueller, Johannes ;

Boescke, Tim S. ;

Schroeder, Uwe ;

Hoffmann, Raik ;

Mikolajick, Thomas ;

Frey, Lothar .

IEEE ELECTRON DEVICE LETTERS, 2012, 33 (02) :185-187

[17] Incipient Ferroelectricity in Al-Doped HfO2 Thin Films [J].

Mueller, Stefan ;

Mueller, Johannes ;

Singh, Aarti ;

Riedel, Stefan ;

Sundqvist, Jonas ;

Schroeder, Uwe ;

Mikolajick, Thomas .

ADVANCED FUNCTIONAL MATERIALS, 2012, 22 (11) :2412-2417

[18]

Muller J., 2012, 2012 IEEE Symposium on VLSI Technology, P25, DOI 10.1109/VLSIT.2012.6242443

[19] Applications of modern ferroelectrics [J].

Scott, J. F. .

SCIENCE, 2007, 315 (5814) :954-959

[20] Ferroelectrics go bananas [J].

Scott, J. F. .

JOURNAL OF PHYSICS-CONDENSED MATTER, 2008, 20 (02)