The interaction of H2O with an electron paramagnetic resonance center in oxidized, heat treated SiC

被引：9

作者：

Macfarlane, PJ

Zvanut, ME

机构：

[1] Department of Physics, University of Alabama at Birmington, Birmington

来源：

APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 15期

关键词：

D O I：

10.1063/1.119364

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We examine a defect in heat treated, oxidized 6H-SiC with electron paramagnetic resonance spectroscopy. Samples are examined before treatment, after oxidation, after dry (<10 ppm H2O) N-2 heat treatment, and after standard (approximately 50 ppm H2O) Ar annealing. A center is observed following dry heat treatment at temperatures greater than 800 degrees C. This center is passivated by standard Ar annealing at temperatures greater than 700 degrees C and regenerated after subsequent dry heat treatment. We suggest that this defect is related to an unpaired electron on a carbon atom created by the release of a hydrogen-related species. (C) 1997 American Institute of Physics.

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页码：2148 / 2150

页数：3

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